U. Ravaioli

Simulation of a long term memory device with a full bandstructure Monte Carlo approach

C.H. Lee, P. Hasler, K. Hess, 1995, IEEE Electron Device Letters.

An improved energy transport model including nonparabolicity and non-Maxwellian distribution effects

U. Ravaioli, R. Dutton, E. Kan, 1992, IEEE Electron Device Letters.

MODFET Ensemble Monte Carlo model including the quasi-two-dimensional electron gas

U. Ravaioli, D. Ferry, Umberto Ravaioli, 1986, IEEE Transactions on Electron Devices.

Advantages of collocation methods over finite differences in one-dimensional Monte Carlo simulations of submicron devices

U. Ravaioli, D.K. Ferry, P. Lugli, 1985, IEEE Transactions on Electron Devices.