D. Greenberg

Semiconductor technology choices for ultrawide-band (UWB) systems

B. Jagannathan, K. Newton, G. Freeman, 2005, 2005 IEEE International Conference on Ultra-Wideband.

Structure optimization of trench-isolated SiGe HBTs for simultaneous improvements in thermal and electrical performances

G. Freeman, D. Greenberg, D. Greenberg, 2005, IEEE Transactions on Electron Devices.

RF CMOS for microwave and mm-wave applications

B. Jagannathan, L. Wagner, D. Goren, 2006, Digest of Papers. 2006 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems.

A 210-GHz f/sub T/ SiGe HBT with a non-self-aligned structure

H. Chen, B. Jagannathan, J. Johnson, 2001, IEEE Electron Device Letters.

Low-noise performance near BV/sub CEO/ in a 200 GHz SiGe technology at different collector design points

G. Freeman, D. Ahlgren, D. Greenberg, 2003, IEEE MTT-S International Microwave Symposium Digest, 2003.

Using silicon-germanium mainstream BiCMOS technology for X-band and LMDS (25-30 GHz) microwave applications

B. Jagannathan, G. Freeman, K. Stein, 2002, 2002 IEEE MTT-S International Microwave Symposium Digest (Cat. No.02CH37278).

Speed and power performance comparison of state-of-the-art CMOS and SiGe RF transistors

B. Jagannathan, G. Freeman, J.-S. Rieh, 2004, Digest of Papers. 2004 Topical Meeting onSilicon Monolithic Integrated Circuits in RF Systems, 2004..