Yu. I. Denisenko

Hf-based barrier layers for Cu-metallization

A. E. Rogozhin, A. G. Vasiliev, V. N. Gusev, 2010, International Conference on Micro- and Nano-Electronics.

Formation of W/HfO2/Si gate structures using in situ magnetron sputtering and rapid thermal annealing

V. I. Rudakov, Yu. I. Denisenko, V. Naumov, 2014 .

Annealing effect on the formation of high-k dielectric in the W/ultrathin HfO2/Si-substrate system

V. I. Rudakov, Yu. I. Denisenko, E. A. Bogoyavlenskaya, 2012 .

Forming through channels in silicon substrates

V. I. Rudakov, Yu. I. Denisenko, E. Buchin, 2002 .

Formation and investigation of cobalt silicide ultrathin layers in Ti/Co/Ti-, TiN/Ti/Co-, and TiN/Co-on-silicon structures

V. I. Rudakov, Yu. I. Denisenko, V. Naumov, 2012 .

Control of the formation of ultrathin CoSi2 layers during the rapid thermal annealing of Ti/Co/Ti/Si(100) structures

V. I. Rudakov, Yu. I. Denisenko, V. Naumov, 2011 .

Features of CoSi2 phase formation by two-stage rapid thermal annealing of Ti/Co/Ti/Si(100) structures

V. I. Rudakov, Yu. I. Denisenko, V. Naumov, 2011 .

Investigation into the diffusion of boron, phosphorus, and arsenic in silicon during annealing in a nonisothermal reactor

V. V. Ovcharov, V. I. Rudakov, Yu. I. Denisenko, 2014 .

Investigation into the diffusion of boron, phosphorus, and arsenic in silicon during annealing in a nonisothermal reactor

V. V. Ovcharov, V. I. Rudakov, Yu. I. Denisenko, 2014, Russian Microelectronics.