Laurent Azarnouche

发表

Interactions between plasma and block copolymers used in directed self-assembly patterning

David B. Graves, C. Grant Willson, Christopher J. Ellison, 2016, SPIE Advanced Lithography.

Plasma treatments to improve line-width roughness during gate patterning

Olivier Joubert, Marc Fouchier, Erwine Pargon, 2013 .

193nm resist chemical modification induced by HBr cure plasma treatment: a TD-GC/MS outgassing study

Erwine Pargon, Raluca Tiron, Claire Sourd, 2011, Advanced Lithography.

Plasma treatment to improve linewidth roughness during gate patterning

Olivier Joubert, Marc Fouchier, Erwine Pargon, 2012, Advanced Lithography.

HBr Plasma Treatment Versus VUV Light Treatment to Improve 193 nm Photoresist Pattern Linewidth Roughness

Olivier Joubert, Marc Fouchier, Erwine Pargon, 2011 .

Plasma and photon interactions with organosilicon polymers for directed self-assembly patterning applications

David B. Graves, Christopher J. Ellison, Emir Gurer, 2016 .

Smoothing mechanisms involved in thermal treatment for linewidth roughness reduction of 193-nm photoresist patterns

Marc Fouchier, Erwine Pargon, K. Menguelti, 2013 .

Unbiased line width roughness measurements with critical dimension scanning electron microscopy and critical dimension atomic force microscopy

Olivier Joubert, Marc Fouchier, Erwine Pargon, 2012 .

Benefits of plasma treatments on critical dimension control and line width roughness transfer during gate patterning

Olivier Joubert, Marc Fouchier, Erwine Pargon, 2013 .