Kazuya Matsuzawa

发表

11 th IEEE International Conference on Advanced Thermal Processing of Semiconductors

Sergey Smolskiy, Yumoto Fujiya, Kazuya Matsuzawa, 2001 .

A new design scheme for logic circuits with single electron transistors

Ken Uchida, Kazuya Matsuzawa, Akira Toriumi, 1999 .

Non-quasi-static carrier dynamics of MOSFETs under low-voltage operation

Takahiro Iizuka, Toshiro Tsukada, Norio Sadachika, 2008 .

Process dependence of 1/f noise : For realization of high performance analog circuits

Kazuya Matsuzawa, K. Kojima, Tatsuya Ohguro, 2003 .

Domain Divided Device Simulation with Flexible Boundary Conditions

Kazuya Matsuzawa, Masatoshi Abe, Yoshinori Oda, 2019 .

Simple technique for prediction of breakdown voltage of ultrathin gate insulator under ESD testing

Kazuya Matsuzawa, Yuichiro Mitani, 2015, 2015 International Conference on IC Design & Technology (ICICDT).

Device Simulation of Reliability for Advanced Semiconductor Devices

Sadayuki Yoshitomi, Kazuya Matsuzawa, Takeshi Naito, 2018 .

Comprehensive studies on the accuracy of trap characterization by using advanced random telegraph noise simulator

Kazuya Matsuzawa, Takamitsu Ishihara, Yusuke Higashi, 2014 .

Non-quasi-static carrier dynamics of MOSFETs under low-voltage operation

Hans Jürgen Mattausch, Toshiro Tsukada, Norio Sadachika, 2008, 2008 International Conference on Simulation of Semiconductor Processes and Devices.

Modeling of NBTI Stress Induced Hole-Trapping and Interface-State-Generation Mechanisms under a Wide Range of Bias Conditions

Hans Jürgen Mattausch, Chenyue Ma, Mitiko Miura-Mattausch, 2013, IEICE Trans. Electron..

Simulation technique of heating by contact resistance for ESD protection device

Kazuya Matsuzawa, Hirobumi Kawashima, T. Matsuhashi, 2002, International Conferencre on Simulation of Semiconductor Processes and Devices.

On discrete random dopant modeling in drift-diffusion simulations: physical meaning of 'atomistic' dopants

Nobuyuki Sano, Kazuya Matsuzawa, Noriaki Nakayama, 2002, Microelectron. Reliab..

Study of Domain Division Method for Simulation of Sensor Array

Ken Uchida, Kazuya Matsuzawa, Takahisa Tanaka, 2017 .

Comprehensive Understanding of Random Telegraph Noise with Physics Based Simulation

Kazuya Matsuzawa, Tatsuya Ohguro, Hisayo Sasaki Momose, 2011 .

An apparatus for performing time-function Limitierungs

Hiroshi Watanabe, Kazuya Matsuzawa, Riichiro Shirota, 2003 .

Investigation of BSIM4 parameter extraction and characterization for Multi Gate Oxide-Dual Work Function (MGO-DWF)-MOSFET

Kazuya Matsuzawa, Chika Tanaka, Kanna Adachi, 2016, 2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS).

Monte Carlo Simulation of Sub-0.1 mum Devices with Schottky Contact Model

Ken Uchida, Kazuya Matsuzawa, Akira Nishiyama, 2000 .

Comprehensive Understanding of Electron and Hole Mobility Limited by Surface Roughness Scattering in Pure Oxides and Oxynitrides Based on Correlation Function of Surface Roughness

Shinichi Takagi, Kazuya Matsuzawa, Takamitsu Ishihara, 2001 .

Universal NBTI Compact Model for Circuit Aging Simulation under Any Stress Conditions

Hans Jurgen Mattausch, Mitiko Miura-Mattausch, Kazuya Matsuzawa, 2014, IEEE Transactions on Device and Materials Reliability.

Impact of Random Dopant Fluctuation on Size-Dependence of Contact Resistance

Kazuya Matsuzawa, 2011 .

Unified Reaction–Diffusion Model for Accurate Prediction of Negative Bias Temperature Instability Effect

Mitiko Miura-Mattausch, Takahiro Iizuka, Kazuya Matsuzawa, 2012 .

A physically based base pushout model for submicrometer BJTs in the presence of velocity overshoot

Shigeyoshi Watanabe, Kazuya Matsuzawa, Tsuneaki Fuse, 1992 .

Simulations of Schottky barrier diodes and tunnel transistors

Ken Uchida, Kazuya Matsuzawa, A. Nishiyama, 1998, 1998 Sixth International Workshop on Computational Electronics. Extended Abstracts (Cat. No.98EX116).

Current Fluctuation Characteristic of Sub-0.1 Micron Device Structures:A Monte Carlo Study

Kenji Natori, Nobuyuki Sano, Kazuya Matsuzawa, 1999 .

Unified Transient and Frequency Domain Noise Simulation for Random Telegraph Noise and Flicker Noise Using a Physics-Based Model

Kazuya Matsuzawa, Yuichiro Mitani, Tatsuya Ohguro, 2014, IEEE Transactions on Electron Devices.

Technology trends of silicon-on-insulator-its advantages and problems to be solved

Kazuya Matsuzawa, Naoyuki Shigyo, Yukihiro Ushiku, 1994, Proceedings of 1994 IEEE International Electron Devices Meeting.

Enhancement of hot-electron generation rate in Schottky source metal–oxide–semiconductor field-effect transistors

Shinichi Takagi, Ken Uchida, Kazuya Matsuzawa, 2000 .

Suppression of the floating-body effect in SOI MOSFET's by the bandgap engineering method using a Si/sub 1-x/Ge/sub x/ source structure

Kazuya Matsuzawa, Mamoru Terauchi, Naoyuki Shigyo, 1997 .

Influence of Thermal Noise on Drain Current in Very Small Si-MOSFETs.

Nobuyuki Sano, Kazuya Matsuzawa, Mikio Mukai, 2000 .

Suppression of the Floating-Body Effect in SOI MOSFET's by the Bandgap Engineering Method Using a Si Ge Source Structure

Kazuya Matsuzawa, Mamoru Terauchi, Naoyuki Shigyo, 1997 .