Louis D. Lanzerotti

Status and Direction of Communication Technologies - SiGe BiCMOS and RFCMOS

James S. Dunn, Edward J. Nowak, Alvin J. Joseph, 2005, Proceedings of the IEEE.

SiGe BiCMOS Trends - Today and Tomorrow

James S. Dunn, Alvin J. Joseph, David L. Harame, 2006, IEEE Custom Integrated Circuits Conference 2006.

Foundation of rf CMOS and SiGe BiCMOS technologies

James S. Dunn, David R. Greenberg, Bernard S. Meyerson, 2003, IBM J. Res. Dev..

Silicon germanium heterojunction bipolar transistor electrostatic discharge power clamps and the Johnson limit in RF bicmos SiGe technology

P. Juliano, Steven H. Voldman, Louis D. Lanzerotti, 2002 .

Applications focused trends in sige bicmos technologies

Alvin J. Joseph, Louis D. Lanzerotti, Natalie B. Feilchenfeld, 2005 .

High current transmission line pulse (TLP) and ESD characterization of a silicon germanium heterojunction bipolar transistor with carbon incorporation

Steven H. Voldman, Louis D. Lanzerotti, David C. Sheridan, 2002, 2002 IEEE International Reliability Physics Symposium. Proceedings. 40th Annual (Cat. No.02CH37320).

ESD robustness of a BiCMOS SiGe technology

James S. Dunn, Bernard S. Meyerson, David L. Harame, 2000, Proceedings of the 2000 BIPOLAR/BiCMOS Circuits and Technology Meeting (Cat. No.00CH37124).