Ahmad Zubair

发表

Materials and Technology Issues for the Next Generation of Power Electronic Devices

Yuhao Zhang, Ahmad Zubair, John Niroula, 2020, 2020 Device Research Conference (DRC).

Small-Signal, High Frequency Performance of Vertical GaN FinFETs with fmax = 5.9 GHz

Ahmad Zubair, Tomás Palacios, Joshua A. Perozek, 2021, 2021 Device Research Conference (DRC).

Large-Area 1.2-kV GaN Vertical Power FinFETs With a Record Switching Figure of Merit

Daniel Piedra, Xiang Gao, Ahmad Zubair, 2018, IEEE Electron Device Letters.

Role of Molecular Sieves in the CVD Synthesis of Large‐Area 2D MoTe2

Jing Kong, Ahmad Zubair, Tomas Palacios, 2017 .

Subthreshold swing improvement in MoS2 transistors by the negative-capacitance effect in a ferroelectric Al-doped-HfO2/HfO2 gate dielectric stack.

Ahmad Zubair, Tomás Palacios, Mildred Dresselhaus, 2017, Nanoscale.

MoS2 Field-Effect Transistor with Sub-10 nm Channel Length.

Jing Kong, Ahmad Zubair, Efthimios Kaxiras, 2016, Nano letters.

Transport Properties of a MoS₂/WSe₂ Heterojunction Transistor and Its Potential for Application

Ahmad Zubair, Mildred S. Dresselhaus, M. Dresselhaus, 2016 .

Negative Capacitance Carbon Nanotube FETs

Ahmad Zubair, Gage Hills, Max M. Shulaker, 2018, IEEE Electron Device Letters.

Design, Modeling, and Fabrication of Chemical Vapor Deposition Grown MoS2 Circuits with E-Mode FETs for Large-Area Electronics.

Jing Kong, Anantha Chandrakasan, Ahmad Zubair, 2016, Nano letters.

Synthesis of High‐Quality Large‐Area Homogenous 1T′ MoTe2 from Chemical Vapor Deposition

Jing Kong, Ziqiang Wang, Ahmad Zubair, 2016, Advanced materials.