C. S. Whelan

Reliability of metamorphic HEMTs on GaAs substrates

P. F. Marsh, C. S. Whelan, W. E. Hoke, 2002, Microelectron. Reliab..

W-band Metamorphic Low Noise and Power Amplifiers

C. S. Whelan, R. E. Leoni, K. J. Herrick, 2003 .

Low Noise and Power Metamorphic HEMT Devices and Circuits with X=30% to 60% InxGaAs Channels on GaAs Substrates

C. S. Whelan, W. E. Hoke, P. F. Marsh, 2000 .

GaAs-Based Metamorphic Technology

C. S. Whelan, R. E. Leoni, J. G. Hunt, 2002 .

METAMORPHIC LOW NOISE AMPLIFIERS AND OPTICAL COMPONENTS

C. S. Whelan, R. E. Leoni, Y. Zhang, 2003 .

Low energy electron beam top surface image processing using chemically amplified AXT resist

Michael Isaacson, Harold G. Craighead, C. S. Whelan, 1997 .

Low Noise In 0.32 (AlGa) 0.68 As/In 0.43 Ga 0.57 As Metamorphic HEMT on GaAs Substrate with 850 mW/mm Output Power Density

C. S. Whelan, P. F. Marsh, S. M. Lardizabal, 2000 .

Growth and characterization of metamorphic Inx(AlGa)1−xAs/InxGa1−xAs high electron mobility transistor material and devices with X=0.3–0.4

C. S. Whelan, W. E. Hoke, A. Torabi, 2000 .

W-band power metamorphic HEMT technology on GaAs

C. S. Whelan, K. J. Herrick, P. F. Marsh, 2003, International Conference onIndium Phosphide and Related Materials, 2003..

K-band receiver front-ends in a GaAs metamorphic HEMT process

Joy Laskar, C. S. Whelan, B. Matinpour, 2001 .