Terry Torng

发表

A manufacturing lithographic approach for high density MRAM device using KrF double mask patterning technique

Daniel Liu, Tom Zhong, Terry Torng, 2009, Advanced Lithography.

Demonstration of fully functional 8Mb perpendicular STT-MRAM chips with sub-5ns writing for non-volatile embedded memories

Tom Zhong, Terry Torng, Luc Thomas, 2014, 2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers.

Demonstration of an MgO based anti-fuse OTP design integrated with a fully functional STT-MRAM at the Mbit level

Tom Zhong, Terry Torng, Luc Thomas, 2015, 2015 Symposium on VLSI Technology (VLSI Technology).

Reliability study of perpendicular STT-MRAM as emerging embedded memory qualified for reflow soldering at 260°C

Tom Zhong, Terry Torng, Yung-Huei Lee, 2016, 2016 IEEE Symposium on VLSI Technology.

Achieving Sub-ns switching of STT-MRAM for future embedded LLC applications through improvement of nucleation and propagation switching mechanisms

Tom Zhong, Terry Torng, Luc Thomas, 2016, 2016 IEEE Symposium on VLSI Technology.

Perpendicular Stt-Mram Scaling Challenges and Potential Solutions

Tom Zhong, Terry Torng, Jian Zhu, 2016 .

MRAM Co-designed Processing-in-Memory CNN Accelerator for Mobile and IoT Applications

Terry Torng, Baohua Sun, Helen Liu, 2018, 1811.12179.

A Study of Write Margin of Spin Torque Transfer Magnetic Random Access Memory Technology

Tom Zhong, Terry Torng, Tai Min, 2010, IEEE Transactions on Magnetics.

Solving the paradox of the inconsistent size dependence of thermal stability at device and chip-level in perpendicular STT-MRAM

Tom Zhong, Terry Torng, Guenole Jan, 2015, 2015 IEEE International Electron Devices Meeting (IEDM).

Study of dielectric breakdown distributions in magnetic tunneling junction with MgO barrier

Terry Torng, Tai Min, Denny D. Tang, 2009 .

High Spin Torque Efficiency of Magnetic Tunnel Junctions with MgO/CoFeB/MgO Free Layer

Tom Zhong, Terry Torng, Guenole Jan, 2012 .