H. Sugiyama

Voltage-control spintronics memory (VoCSM) having potentials of ultra-low energy-consumption and high-density

M. Shimizu, H. Yoda, Y. Saito, 2016, 2016 IEEE International Electron Devices Meeting (IEDM).

The Pursuit of Saving Energy Consumption of Memory Systems by MRAMs, from STT-MRAM to Voltage-Control Spintronics Memory (VoCSM)

H. Yoda, N. Shimomura, K. Koi, 2018, 2018 IEEE International Magnetic Conference (INTERMAG).

Evaluation of Structural Responses on Artificial Fatigue Crack for Bulb Rib Orthotropic Deck

Jin Hee Ahn, Young Soo Jeong, Shigenobu Kainuma, 2015 .

Spin relaxation through lateral spin transport in heavily doped n -type silicon

Yuichi Fujita, Yoshiaki Saito, Mizue Ishikawa, 2017 .

Voltage-Control Spintronics Memory With a Self-Aligned Heavy-Metal Electrode

N. Shimomura, K. Koi, K. Ikegami, 2017, IEEE Transactions on Magnetics.

Ramp-edge junctions with interface-modified barriers fabricated on YBCO thick films

Masahiro Horibe, Keiichi Tanabe, Hironori Wakana, 2003 .

Fabrication of interface-modified ramp-edge junction on YBCO ground plane with multilayer structure

Masahiro Horibe, Keiichi Tanabe, Hironori Wakana, 2003 .

Characteristics of high critical current density Josephson junctions with Nb/AlO/sub x//Nb trilayers

A. Fujimaki, H. Sugiyama, H. Hayakawa, 1995, IEEE Transactions on Applied Superconductivity.