M. Shima

Subfemtojoule 0.15 /spl mu/m InGaP/InGaAs/GaAs pseudomorphic HEMT DCFL circuits under 1 V supply voltage

N. Hara, T. Shimura, H. Suehiro, 1996, GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996.

0.25 mu m gate length N-InGaP/InGaAs/GaAs HEMT DCFL circuit with lower power dissipation than high-speed Si CMOS circuits

N. Hara, I. Hanyu, M. Takikawa, 1992, 1992 International Technical Digest on Electron Devices Meeting.

High RF power transistor with laterally modulation-doped channel and self-aligned silicide in 45nm node CMOS technology

T. Suzuki, K. Joshin, Y. Kawano, 2008, 2008 IEEE International Electron Devices Meeting.