Michael Nelhiebel

发表

Characterization of cyclic delamination behavior of thin film multilayers

T. Walter, Golta Khatibi, Michael Nelhiebel, 2018, Microelectron. Reliab..

Validated electro-thermal simulations of two different power MOSFET technologies and implications on their robustness

Andrea Irace, Stefan Decker, Robert Illing, 2013, 2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD).

On the temperature dependence of NBTI recovery

Tibor Grasser, Michael Nelhiebel, Thomas Aichinger, 2008, Microelectron. Reliab..

High temperature storage reliability investigation of the Al-Cu wire bond interface

Golta Khatibi, Michael Nelhiebel, R. Pelzer, 2012, Microelectron. Reliab..

Combined experimental and numerical approach to study electro-mechanical resonant phenomena in GaN-on-Si heterostructures

Michael Nelhiebel, Mirko Bernardoni, A. Lindemann, 2018, Microelectron. Reliab..

A reliable technology concept for active power cycling to extreme temperatures

Stefan Decker, Markus Ladurner, Robert Illing, 2011, Microelectron. Reliab..

Finite-Element Analysis of Coupled Electro-Thermal Problems With Strong Scale Separation

Manfred Kaltenbacher, Michael Nelhiebel, Sebastian Eiser, 2017, IEEE Transactions on Power Electronics.

Improved thermal management of low voltage power devices with optimized bond wire positions

Dionyz Pogany, Markus Ladurner, Robert Illing, 2011, Microelectron. Reliab..

Refined NBTI characterization of arbitrarily stressed PMOS devices at ultra-low and unique temperatures

Tibor Grasser, Michael Nelhiebel, Thomas Aichinger, 2013, Microelectron. Reliab..

High cycle fatigue testing of thermosonic ball bonds

Golta Khatibi, Michael Nelhiebel, M. Lederer, 2017, Microelectron. Reliab..

Michael Nelhiebel, Thomas Detzel, Emmerich Bertagnolli, 2005, Microelectron. Reliab..

Exploring the thermal limit of GaN power devices under extreme overload conditions

Michael Nelhiebel, Frank Altmann, Mirko Bernardoni, 2017, Microelectron. Reliab..

Effective and reliable heat management for power devices exposed to cyclic short overload pulses

Stefan Decker, Markus Ladurner, Robert Illing, 2013, Microelectron. Reliab..

Modeling of highly anisotropic microstructures for electro-thermal simulations of power semiconductor devices

Andrea Irace, Stefan Decker, Vladimír Kosel, 2012, Microelectron. Reliab..

Inspection of electrical interconnections within power ICs via magneto-optical imaging

Michael Nelhiebel, Bernhard G. Zagar, Patrick A. Hölzl, 2015, 2015 IEEE International Instrumentation and Measurement Technology Conference (I2MTC) Proceedings.

Modeling fatigue life of power semiconductor devices with ε-N fields

Michael Nelhiebel, Kathrin Plankensteiner, Olivia Bluder, 2014, Proceedings of the Winter Simulation Conference 2014.

Global and local fracture properties of interfaces for robust material combinations in power devices

Steffen Brinckmann, Michael Nelhiebel, J. Fugger, 2015 .

Impact of gate poly doping and oxide thickness on the N- and PBTI in MOSFETs

Tibor Grasser, Michael Nelhiebel, Gregor Pobegen, 2011, Microelectron. Reliab..

Dependence of the negative bias temperature instability on the gate oxide thickness

Tibor Grasser, Michael Nelhiebel, Gregor Pobegen, 2010, 2010 IEEE International Reliability Physics Symposium.

Impact of Hydrogen on the Bias Temperature Instability

Michael Nelhiebel, Gregor Pobegen, Thomas Aichinger, 2014 .

Observation of Normally Distributed Energies for Interface Trap Recovery After Hot-Carrier Degradation

Tibor Grasser, Michael Nelhiebel, Gregor Pobegen, 2013, IEEE Electron Device Letters.

Energetic distribution of oxide traps created under negative bias temperature stress and their relation to hydrogen

Stefan Decker, Tibor Grasser, Michael Nelhiebel, 2010 .

Observing two stage recovery of gate oxide damage created under negative bias temperature stress

Tibor Grasser, Michael Nelhiebel, Sascha Einspieler, 2010 .