Tomasz Brozek

Design and Measurement Requirements for Short Flow Test Arrays to Characterize Emerging Memories

Dennis Ciplickas, Tomasz Brozek, 2019, IEEE Journal of the Electron Devices Society.

Radiation hardness of silicon dioxide dielectric strength in silicon MOS structures

Tomasz Brozek, 1992, Other Conferences.

Influence of silicon surface carbon contamination on oxide quality and SiO2-Si systems properties

Tomasz Brozek, Romuald B. Beck, Jerzy Ruzyllo, 1992, Other Conferences.

In-line testing of antenna-type test structures for separation of sources of process-induced damage

Tomasz Brozek, Thuy Dao, Douglas R. Roberts, 1997, Advanced Lithography.

Characterization of degradation processes in MOS VLSI structures

Andrzej Jakubowski, Tomasz Brozek, Bogdan Majkusiak, 1992, Other Conferences.

Sensitivity of polysilicon and polycide antenna MOS capacitor to ion implantation charging effects

Tomasz Brozek, Cory Norton, 2000, SPIE Advanced Lithography.

Enhanced Hole Trapping in MOS Devices Damaged by Plasma-Induced Charging

Tomasz Brozek, Y. David Chan, Chand R. Viswanathan, 1996, ESSDERC '96: Proceedings of the 26th European Solid State Device Research Conference.

Breakdown properties of thin oxides in irradiated MOS capacitors

Ninoslav Stojadinovic, Andrzej Jakubowski, Tomasz Brozek, 1993 .

Effect of device type and plasma process on the oxide thickness dependence of plasma-induced charging damage

Tomasz Brozek, T. Dao, 1998, 1998 3rd International Symposium on Plasma Process-Induced Damage (Cat. No.98EX100).