H. Goto

Convergence estimation for stationary ensemble Monte Carlo simulations

C. Jungemann, S. Yamaguchi, H. Goto, 1996, Journal of Technology Computer Aided Design TCAD.

An isolation technology for high performance bipolar memories — IOP-II

H. Goto, T. Takada, R. Abe, 1982, 1982 International Electron Devices Meeting.

Accurate prediction of hot-carrier effects for a deep sub-/spl mu/m CMOS technology based on inverse modeling and full band Monte Carlo device simulation

S. Yamaguchi, H. Goto, Chr. Jungemann, 1996, 1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095).

Phase space multiple refresh: A general purpose statistical enhancement technique for Monte Carlo device simulation

H. Goto, S. Decker, Chr. Jungemann, 1996, Journal of Technology Computer Aided Design TCAD.

Analysis of highly doped collector transistors by using two-dimensional process/device simulation and its application of ECL circuits

H. Goto, T. Takada, Y. Nagase, 1991 .

Phase space multiple refresh: a versatile statistical enhancement method for Monte Carlo device simulation

Christoph Jungemann, H. Goto, S. Decker, 1996, 1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095).

A sub-40 ps ECL circuit at a switching current of 1.28 MA

H. Goto, H. Tsunoi, E. Sugiyama, 1987, 1987 International Electron Devices Meeting.

Is there experimental evidence for a difference between surface and bulk impact ionization in silicon?

H. Goto, C. Jungemann, S. Yamaguchi, 1996, International Electron Devices Meeting. Technical Digest.

Future Bipolar Device Structures

H. Goto, 1988, ESSDERC '88: 18th European Solid State Device Research Conference.