J. B. Langworthy

ELECTRICALLY EXPLODED WIRES--EXPERIMENTS AND THEORY, PROGRESS REPORT FOR MARCH 1, 1958 TO JUNE 30, 1960

I. M. Vitkovitsky, D. F. Hansen, J. B. Langworthy, 1961 .

The effects of funneling on space upset rate (microelectronics-space irradiation)

J. B. Langworthy, 1993 .

Two parameter Bendel model calculations for predicting proton induced upset (ICs)

W. J. Stapor, J. B. Langworthy, J. Meyers, 1990 .

Suggested Single Event Upset Figure of Merit

S. E. Diehl, E. L. Petersen, J. B. Langworthy, 1983, IEEE Transactions on Nuclear Science.

Depletion region geometry analysis applied to single event sensitivity

J. B. Langworthy, J. Langworthy, 1989 .

Proton and heavy ion upsets in GaAs MESFET devices

Dale McMorrow, P. J. McNulty, L. H. Tran, 1991 .

Heavy ion and proton analysis of a GaAs C-HIGFET SRAM

Paul W. Marshall, A. Peczalski, A. B. Campbell, 1993 .

Implications of the spatial dependence of the single-event-upset threshold in SRAMs measured with a pulsed laser

A. B. Campbell, S. P. Buchner, W. J. Stapor, 1994 .