Shinji Fujieda

Characterization of interface defects related to negative-bias temperature instability in ultrathin plasma-nitrided SiON/Si<1 0 0> systems

Akitaka Yoshigoe, Yuden Teraoka, Shinji Fujieda, 2005, Microelectron. Reliab..

Reliability driven guideline for BEOL Optimization: Protecting MOS stacks from hydrogen-related impurity penetration

Ziyuan Liu, Markus Wilde, Katsuyuki Fukutani, 2012, 2012 IEEE International Conference on IC Design & Technology.

A 65nm-node LSTP(LOW Standby Power) Poly-Si/a-Si/HfSiON Transistor with High Ion-Istandby Ratio and Reliability

Kiyotaka Imai, Toru Tatsumi, T. Iwamoto, 2004 .

Nitridation effects on Pb center structures at SiO2/Si(100) interfaces

Shinji Fujieda, Yoshinao Miura, S. Fujieda, 2004 .

Interface defects responsible for negative-bias temperature instability in plasma-nitrided SiON/Si(100) systems

Koichi Ando, Shinji Fujieda, Yoshinao Miura, 2003 .

Influence of H2-annealing on the hydrogen distribution near SiO2/Si(100) interfaces revealed by in situ nuclear reaction analysis

Koichi Ando, Markus Wilde, Katsuyuki Fukutani, 2002 .

Low Temperature Growth of GaN and AlN on GaAs Utilizing Metalorganics and Hydrazine

Masashi Mizuta, Shinji Fujieda, Tsutomu Kawamura, 1986 .

Control of GaAs Schottky barrier height using a thin nonstoichiometric GaAs interface layer grown by low‐temperature molecular beam epitaxy

Shinji Fujieda, S. Fujieda, 1993 .

Single silicon vacancy-oxygen complex defect and variable retention time phenomenon in dynamic random access memories

K. Ohyu, Takahide Umeda, K. Hamada, 2006 .

Effect of ReRAM-stack asymmetry on read disturb immunity

Masayuki Terai, Hiromitsu Hada, Noriyuki Iguchi, 2009, 2009 IEEE International Reliability Physics Symposium.