Kai Chen

Modeling reverse short channel and narrow width effects in small size MOSFET's for circuit simulation

Chenming Hu, T. Sugii, Yuhua Cheng, 1997, SISPAD '97. 1997 International Conference on Simulation of Semiconductor Processes and Devices. Technical Digest.

The impact of device scaling and power supply change on CMOS gate performance

Chenming Hu, P.K. Ko, Kai Chen, 1996, IEEE Electron Device Letters.

Sphinx: Enabling Privacy-Preserving Online Learning over the Cloud pdf

Kai Chen, Han Tian, Chaoliang Zeng, 2022, IEEE S&P 2022.

An accurate semi-empirical saturation drain current model for LDD n-MOSFET

J. Duster, D. Pramanik, Kai Chen, 1996, IEEE Electron Device Letters.

ICM-an analytical inversion charge model for accurate modeling of thin gate oxide MOSFETs

Chenming Hu, K. Imai, Yuhua Cheng, 1997, SISPAD '97. 1997 International Conference on Simulation of Semiconductor Processes and Devices. Technical Digest.

Experimental confirmation of an accurate CMOS gate delay model for gate oxide and voltage scaling

Chenming Hu, Peng Fang, A. Gupta, 1997, IEEE Electron Device Letters.

Accurate models for CMOS scaling and gate delay in deep sub-micron regime

Chenming Hu, Peng Fang, A. Gupta, 1997, SISPAD '97. 1997 International Conference on Simulation of Semiconductor Processes and Devices. Technical Digest.

Quarter-micrometre surface and buried channel PMOSFET modelling for circuit simulation

Chenming Hu, Bin Yu, Yuhua Cheng, 1996 .