K. Fukuoka

Low Power SOC Design Using Partial-Trench-Isolation ABC SOI (PTI-ABC SOI) for Sub-100-nm LSTP Technology

Y. Maki, Y. Yasu, T. Ipposhi, 2006, 2006 Symposium on VLSI Circuits, 2006. Digest of Technical Papers..

A 1.92 μs-wake-up time thick-gate-oxide power switch technique for ultra low-power single-chip mobile processors

Y. Yasu, Y. Igarashi, O. Ozawa, 2007, 2007 IEEE Symposium on VLSI Circuits.

Active body-biasing control technique for bootstrap pass-transistor logic on PD-SOI at 0.5V-V/sub DD/

S. Maegawa, M. Numa, A. Tada, 2005, 2005 IEEE International SOI Conference Proceedings.