Yeong Kwan Kim

Novel integration technology with capacitor over metal (COM) by using self-aligned dual damascene (SADD) process for 0.15 /spl mu/m stand-alone and embedded DRAMs

Kinam Kim, Jong-Ho Lee, Won Seok Lee, 1999 .

5.2 Novel MIS AL0, Capacitor as a Prospective Technology for Gbit DRAMs

Byoung Taek Lee, Moon Yong Lee, Yeong Kwan Kim, 2000 .