M. Suzuki

Reduction of Vth variation by work function optimization for 45-nm node SRAM cell

Y. Akiyama, K. Imai, Y. Yamagata, 2008, 2008 Symposium on VLSI Technology.

Impact of trap creation at SiO2/Poly-Si interface on ultra-thin SiO2 reliability

Y. Mitani, M. Suzuki, Y. Higashi, 2016, 2016 IEEE International Reliability Physics Symposium (IRPS).

Effect of Hf-N bond on properties of thermally stable amorphous HfSiON and applicability of this material to sub-50nm technology node LSIs

M. Suzuki, T. Ino, A. Nishiyama, 2003, IEEE International Electron Devices Meeting 2003.

Understanding of Tunable Selector Performance in Si-Ge-As-Se OTS Devices by Extended Percolation Cluster Model Considering Operation Scheme and Material Design

R. Delhougne, R. Degraeve, L. Goux, 2020, 2020 IEEE Symposium on VLSI Technology.

Degradation mechanism of HfSiON gate insulator and effect of nitrogen composition on the statistical distribution of the breakdown

H. Satake, M. Suzuki, T. Ino, 2003, IEEE International Electron Devices Meeting 2003.

Effects of nitrogen in HfSiON gate dielectric on the electrical and thermal characteristics

M. Takayanagi, S. Inumiya, M. Suzuki, 2002, Digest. International Electron Devices Meeting,.