A. Banerjee

$\mu s$-Range Evaluation of Threshold Voltage Instabilities of GaN-on-Si HEMTs with p-GaN Gate

G. Meneghesso, M. Meneghini, P. Moens, 2019, 2019 IEEE International Reliability Physics Symposium (IRPS).

Impact of buffer leakage on intrinsic reliability of 650V AlGaN/GaN HEMTs

G. Meneghesso, M. Meneghini, M. Tack, 2015, 2015 IEEE International Electron Devices Meeting (IEDM).

An industrial process for 650V rated GaN-on-Si power devices using in-situ SiN as a gate dielectric

P. Gassot, M. Tack, P. Moens, 2014, 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD).

On the impact of Carbon-doping and channel thickness on the dynamic Ron of 650V GaN power devices

Gaudenzio Meneghesso, Enrico Zanoni, Peter Moens, 2015 .

An industry-ready 200 mm p-GaN E-mode GaN-on-Si power technology

S. Decoutere, M. Tack, P. Moens, 2018, 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD).

Negative dynamic Ron in AlGaN/GaN power devices

G. Meneghesso, M. Meneghini, M. Tack, 2017, 2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD).

AlGaN/GaN power device technology for high current (100+ A) and high voltage (1.2 kV)

M. Tack, P. Moens, P. Coppens, 2016, 2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD).