Marcel A. Py

The quantum Hall effect as a standard to define the laboratory unit of resistance

Marc Ilegems, Wolfgang Schwitz, Lucien Bauder, 1987, IEEE Transactions on Instrumentation and Measurement.

Current status of AlInN layers lattice-matched to GaN for photonics and electronics

Jeremy J. Baumberg, Pavlos G. Lagoudakis, Eric Feltin, 2007 .

Low-frequency noise properties of selectively dry etched InP HEMT's

M. Beck, H. C. Duran, Werner Bächtold, 1998 .

Evaluation of AlInN=GaN HEMTs on sapphire substrate in microwave, time and temperature domains

C. Gaquiere, D. Ducatteau, E. Kohn, 2007 .

Small-signal characteristics of AlInN/GaN HEMTs

Christophe Gaquiere, E. Kohn, Nicolas Grandjean, 2006 .

Evidence for screening effects on the 1/f current noise in GaAs/AlGaAs modulation doped field effect transistors

Marcel A. Py, M. Py, H.‐J. Buehlmann, 1996 .

Properties of alloyed AuGeNi-contacts on GaAs/Ga/AlAs-heterostructures

Marc Ilegems, Romuald Houdré, Beat Jeckelmann, 1990 .