B. To

A 0.021 µm2 trigate SRAM cell with aggressively scaled gate and contact pitch

V. Narayanan, M. Khater, I. Lauer, 2011, 2011 Symposium on VLSI Technology - Digest of Technical Papers.

Investigation of FinFET Devices for 32nm Technologies and Beyond

M. Ieong, L. Chang, W. Haensch, 2006, 2006 Symposium on VLSI Technology, 2006. Digest of Technical Papers..

Silicon-on-Insulator MOSFETs with Hybrid Crystal Orientations

J. Patel, J. Sleight, M. Ieong, 2006, 2006 Symposium on VLSI Technology, 2006. Digest of Technical Papers..