H. Daembkes

Influence of Advanced GaAs MMICs on Structure and Cost of High Frequency TR-Modules for Communication and Radar Systems for Volume Markets

P. Quentin, M. Lajugie, M. Camiade, 2000, 2000 30th European Microwave Conference.

GaAs MMIC based components and frontends for millimeterwave communication and sensor systems

B. Adelseck, L. P. Schmidt, J. Schroth, 1995, IEEE NTC,Conference Proceedings Microwave Systems Conference.

Determination of the electron saturation velocity in pseudomorphic Al/sub x/Ga/sub 1-x/As/In/sub y/Ga/sub 1-y/As MODFETs at 300 and 100 K

H. Daembkes, H. Daembkes, C. Heedt, 1989 .

The n-channel SiGe/Si modulation-doped field-effect transistor

H. Kibbel, E. Kasper, H. Daembkes, 1986, IEEE Transactions on Electron Devices.

Improved short-channel GaAs MESFET's by use of higher doping concentration

A. Cappy, W. Brockerhoff, H. Daembkes, 1984, IEEE Transactions on Electron Devices.

Fabrication and properties of n-channel SiGe/Si modulation doped field-effect transistors grown by MBE

E. Kasper, H. Daembkes, H. Daembkes, 1985, 1985 International Electron Devices Meeting.