W. Südkamp

Compensation and doping effects in heavily helium-radiated silicon for power device applications

Josef Lutz, Franz-Josef Niedernostheide, Hans-Joachim Schulze, 2006, Microelectron. J..

IMPATT oscillations in fast recovery diodes due to temporarily charged radiation-induced deep levels

J. Lutz, W. Gerlach, W. Südkamp, 1998 .

Irradiation-Induced Deep Levels in Silicon for Power Device Tailoring

Josef Lutz, Hans-Joachim Schulze, Ralf Siemieniec, 2006 .

Determination of parameters of radiation induced traps in silicon

Josef Lutz, Ralf Siemieniec, W. Südkamp, 2002 .

Doping Effects in Heavily Helium-Radiated Silicon

J. Lutz, R. Siemieniec, W. Südkamp, 2004 .