K. Schonenberg

Manufacturability demonstration of an integrated SiGe HBT technology for the analog and wireless marketplace

D.L. Harame, J. Malinowski, D. Sunderland, 1996, International Electron Devices Meeting. Technical Digest.

Large-signal performance of high-BV/sub CEO/ graded epi-base SiGe HBTs at wireless frequencies

E. Bergeault, J. Malinowski, G. Freeman, 1997, International Electron Devices Meeting. IEDM Technical Digest.

Vertical SiGe-base bipolar transistors on CMOS-compatible SOI substrate

Jin Cai, P. Oldiges, Tak Ning, 2003, 2003 Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting (IEEE Cat. No.03CH37440).

A 200 mm SiGe-HBT technology for wireless and mixed-signal applications

C. Kermarrec, J. Malinowski, N. Greco, 1994, Proceedings of 1994 IEEE International Electron Devices Meeting.

Gate length scaling and high drive currents enabled for high performance SOI technology using high-κ/metal gate

E. Luckowski, H. Bu, V. Narayanan, 2008, 2008 IEEE International Electron Devices Meeting.

3.9 ps SiGe HBT ECL ring oscillator and transistor design for minimum gate delay

B. Jagannathan, M. Meghelli, G. Freeman, 2003, IEEE Electron Device Letters.

A 0.18 /spl mu/m 90 GHz f/sub T/ SiGe HBT BiCMOS, ASIC-compatible, copper interconnect technology for RF and microwave applications

B. Jagannathan, J. Johnson, G. Freeman, 1999, International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318).