Ogyun Seok

High-Voltage AlGaN/GaN High-Electron-Mobility Transistors Using Thermal Oxidation for NiO x Passivation

Min-Ki Kim, Min-Woo Ha, Min-Koo Han, 2013 .

High breakdown voltage AlGaN/GaN HEMT by employing selective fluoride plasma treatment

Min-Koo Han, Ogyun Seok, M. Han, 2011, ISPSD 2011.

3.2 kV AlGaN/GaN MIS-HEMTs employing RF sputtered Ga2O3 films

Min-Koo Han, Min-Woo Ha, Ogyun Seok, 2012, 2012 24th International Symposium on Power Semiconductor Devices and ICs.

High-Voltage and Low-Leakage-Current Gate Recessed Normally-Off GaN MIS-HEMTs With Dual Gate Insulator Employing PEALD-${\rm SiN}_{x}$ /RF-Sputtered-${\rm HfO}_{2}$

Ho-Young Cha, Kwang-Seok Seo, Ogyun Seok, 2014, IEEE Electron Device Letters.

AlGaN/GaN MOS-HEMTs-on-Si employing sputtered TaN-based electrodes and HfO2 gate insulator

Min-Woo Ha, Ogyun Seok, 2015 .