D. M. Gaponova

发表

Resonant states of carbon acceptor in p-InGaAs/GaAs-doped quantum well heterostructure

D. V. Kozlov, Alexander F. G. van der Meer, J. N. Hovenier, 2003, Saratov Fall Meeting.

Light absorption and emission in InAs/GaAs quantum dots and stepped quantum wells

D. Pal, Alexey E. Zhukov, Victor M. Ustinov, 2003, Saratov Fall Meeting.

Energy distribution function of hot holes in InGaAs/GaAs quantum well heterostructure: determination and analysis

Vladimir G. Gavrilenko, Vladimir Y. Aleshkin, B. N. Zvonkov, 2001, International Conference on Advanced Optical Materials and Devices.

Growth of BGaAs layers on GaAs substrates by metal-organic vapor-phase epitaxy

M. N. Drozdov, V. I. Shashkin, D. M. Gaponova, 2005 .

Infrared lateral photoconductivity of InGaAs quantum dot heterostructures grown by MOCVD

A. N. Yablonsky, D. M. Gaponova, A. Luk'yanov, 2003 .

Effect of the parameters of sapphire substrates on the crystalline quality of GaN layers

D. M. Gaponova, M. Drozdov, V. Shashkin, 2005 .

The influence of P+, B+, and N+ ion implantation on the luminescence properties of the SiO2: nc-Si system

D. M. Gaponova, V. A. Burdov, S. Morozov, 2004 .

The influence of phosphorus and hydrogen ion implantation on the photoluminescence of SiO2 with Si nanoinclusions

D. M. Gaponova, V. A. Burdov, D. Revin, 2001 .

Stimulated THz emission from resonant intra-center optical pumped Si : P and Si : Bi .

D. M. Gaponova, H. Riemann, S. Pavlov, 2003 .

Stimulated THz emission from Si:P and Si:Bi under resonant intracenter optical pumping

D. M. Gaponova, H. Riemann, S. Pavlov, 2002, Twenty Seventh International Conference on Infrared and Millimeter Waves.

The emission spectra of optically pumped Si-based THz lasers

D. M. Gaponova, H. Riemann, S. Pavlov, 2002, Proceedings, IEEE Tenth International Conference on Terahertz Electronics.

Characterization of GaAs/ InxGa1−xAs quantum-dot heterostructures by electrical and optical methods

D. M. Gaponova, D. Revin, V. Shashkin, 1998 .

Spectra of persistent photoconductivity in InAs/AlSb quantum-well heterostructures

D. M. Gaponova, V. Gavrilenko, S. Morozov, 2005 .

Ion beam synthesis of Si nanocrystals in silicon dioxide and sapphire matrices—the photoluminescence study

D. M. Gaponova, A. P. Kasatkin, S. Morozov, 2005 .

The Luminescent Properties of Ion-Implantation-Fabricated SiO 2 :nc-Si Nanostructures Annealed at High Temperatures

D. M. Gaponova, V. A. Burdov, A. P. Kasatkin, 2003 .

Influence of the nature of oxide matrix on the photoluminescence spectrum of ion-synthesized silicon nanostructures

D. M. Gaponova, A. P. Kasatkin, Lorenzo Pavesi, 2006 .

Phonon-assisted radiative electron-hole recombination in silicon quantum dots

D. M. Gaponova, V. A. Burdov, S. Trushin, 2004 .

The optimization of photoluminescence properties of ion-implantation-produced nanostructures on the basis of Si inclusions in a SiO2 matrix

D. M. Gaponova, D. Revin, S. Trushin, 2002 .

The enhancement of luminescence in ion implanted Si quantum dots in SiO2 matrix by means of dose alignment and doping

D. M. Gaponova, W. Eckstein, D. Revin, 2000 .

Effect of coalescence and of the character of the initial oxide on the photoluminescence of ion-synthesized Si nanocrystals in SiO2

D. M. Gaponova, A. P. Kasatkin, S. Morozov, 2005 .

The influence of the annealing conditions on the photoluminescence of ion-implanted SiO2:Si nanosystem at additional phosphorus implantation

D. M. Gaponova, S. Trushin, D. Tetelbaum, 2003 .

The Influence of Annealing Temperature and Doping on the Red/Near-Infrared Luminescence of Ion Implanted SiO2:nc-Si

D. M. Gaponova, V. A. Burdov, D. Revin, 2001 .

Determination of the heterojunction type in structures with GaAsSb/GaAs quantum wells with various antimony fractions by optical methods

A. N. Yablonsky, D. I. Kryzhkov, D. M. Gaponova, 2012 .

Optical detection of an electric field in a GaAs/AlGaAs n-i-n heterostructure with double quantum wells

D. I. Kryzhkov, D. M. Gaponova, S. Sergeev, 2011 .

Stimulated emission in heterostructures with double InGaAs/GaAsSb/GaAs quantum wells, grown on GaAs and Ge/Si(001) substrates

A. N. Yablonsky, D. M. Gaponova, S. Morozov, 2016 .

The sandwich InGaAs/GaAs quantum dot structure for IR photoelectric detectors

D. M. Gaponova, M. Drozdov, V. Shashkin, 2008 .

InGaAsN/GaAs QD and QW structures grown by MOVPE

D. M. Gaponova, M. Drozdov, V. Shashkin, 2003 .

Photoluminescence of the GaAs superlattices with quasidelta-doped layers

D. M. Gaponova, V. Gavrilenko, S. Morozov, 2003, Proceedings of CAOL'2003. 1st International Conference on Advanced Optoelectronics and Lasers. Jontly with 1st Workshop on Precision Oscillations in Electronics and Optics (IEEE Cat. No.03EX715).

OF THE GAAS SUPERLATTICES WITH QUASI-DELTA-DOPED LAYERS

D. M. Gaponova, V. Gavrilenko, N. Novgorod, 2003 .

Investigation of GaAs/AlGaAs quantum cascade structures by optical methods based on hot luminescence in the near-infrared range

D. I. Kryzhkov, D. M. Gaponova, S. Morozov, 2014 .

Type II-type I conversion of GaAs/GaAsSb heterostructure energy spectrum under optical pumping

A. N. Yablonsky, D. I. Kryzhkov, D. M. Gaponova, 2013 .

InGaAs/GaAs quantum dot heterostructures for 3–5 μm IR detectors

D. M. Gaponova, M. Drozdov, V. Shashkin, 2005 .

The Influence of Annealing Temperature and Doping on the Red/Near-Infrared Luminescence of Ion Implanted SiO2:nc-Si

D. M. Gaponova, D. Revin, S. Trushin, 2001 .