A. Pruijmboom

15 Gbit/s silicon bipolar amplifier IC using a novel mounting technique

J.J.E.M. Hageraats, A. Pruijmboom, 1995 .

QUBiC3: a 0.5 /spl mu/m BiCMOS production technology, with fT=30 GHz, fmax=60 GHz and high-quality passive components for wireless telecommunication applications

N. Morris, A. Pruijmboom, Reinhard Brock, 1998, Proceedings of the 1998 Bipolar/BiCMOS Circuits and Technology Meeting (Cat. No.98CH36198).

Selective-epitaxial base technology with 14 ps ECL-gate delay, for low power wide-band communication systems

J.W. Slotboom, C. E. Timmering, C.E. Timmering, 1995, Proceedings of International Electron Devices Meeting.

Parasitic energy barriers in SiGe HBTs

J.W. Slotboom, G. Streutker, A. Pruijmboom, 1991, IEEE Electron Device Letters.

BASIC: an advanced high-performance bipolar process

R. Dekker, S. Jansen, A. Pruijmboom, 1989, International Technical Digest on Electron Devices Meeting.

Charge sharing effects in bipolar transistors with sub-halfmicron emitter widths

R. Dekker, S. Jansen, A. Pruijmboom, 1990, International Technical Digest on Electron Devices.

On the Optimisation of SiGe-Base Bipolar Transistors

J.W. Slotboom, C.E. Timmering, A. Pruijmboom, 1995, ESSDERC '95: Proceedings of the 25th European Solid State Device Research Conference.