R. L. Ladbury

Use of Commercial FPGA-Based Evaluation Boards for Single-Event Testing of DDR2 and DDR3 SDRAMs

K. A. LaBel, H. S. Kim, E. P. Wilcox, 2013, IEEE Transactions on Nuclear Science.

Statistical Analysis of Heavy-Ion Induced Gate Rupture in Power MOSFETs—Methodology for Radiation Hardness Assurance

C. Poivey, J. R. Schwank, N. Ikeda, 2012, IEEE Transactions on Nuclear Science.

Compendium of Total Ionizing Dose and Displacement Damage for Candidate Spacecraft Electronics for NASA

K. A. LaBel, Dakai Chen, M. V. O'Bryan, 2012, 2012 IEEE Radiation Effects Data Workshop.

Inclusion of Radiation Environment Variability in Total Dose Hardness Assurance Methodology

K. A. LaBel, S. S. McClure, A. Phan, 2017, IEEE Transactions on Nuclear Science.

Effects of Ion Atomic Number on Single-Event Gate Rupture (SEGR) Susceptibility of Power MOSFETs

K. A. LaBel, N. Goldsman, H. S. Kim, 2011, IEEE Transactions on Nuclear Science.