Giovanni Mascali

发表

Charge Transport in Graphene including Thermal Effects

Vittorio Romano, Giovanni Mascali, V. Romano, 2017, SIAM J. Appl. Math..

Exact Maximum Entropy Closure of the Hydrodynamical Model for Si Semiconductors: The 8-Moment Case

Vittorio Romano, Giovanni Mascali, Salvatore La Rosa, 2009, SIAM J. Appl. Math..

Simulation of a double-gate MOSFET by a non-parabolic energy-transport subband model for semiconductors based on the maximum entropy principle

Vittorio Romano, Giovanni Mascali, Vito Dario Camiola, 2013, Math. Comput. Model..

Theoretical foundations for tail electron hydrodynamical models in semiconductors

Giovanni Mascali, Angelo Marcello Anile, 2001, Appl. Math. Lett..

Two Dimensional MESFET Simulation of Transients and Steady State with Kinetic Based Hydrodynamical Models

Salvatore Rinaudo, Giovanni Mascali, Marcello A. Anile, 2001, VLSI Design.

Exploitation of the Maximum Entropy Principle in Mathematical Modeling of Charge Transport in Semiconductors

Vittorio Romano, Giovanni Mascali, V. Romano, 2017, Entropy.

A hydrodynamical model for holes in silicon semiconductors: The case of non-parabolic warped bands

Vittorio Romano, Giovanni Mascali, V. Romano, 2011, Math. Comput. Model..

Scientific computing in electrical engineering

Giovanni Mascali, Giuseppe Alì, Angelo Marcello Anile, 2006 .

A non parabolic hydrodynamical subband model for semiconductors based on the maximum entropy principle

Vittorio Romano, Giovanni Mascali, V. Romano, 2012, Math. Comput. Model..

About the Definition of the Local Equilibrium Lattice Temperature in Suspended Monolayer Graphene

Vittorio Romano, Giovanni Mascali, Marco Coco, 2021, Entropy.

Simulation of Gunn oscillations with a non‐parabolic hydrodynamical model based on the maximum entropy principle

Vittorio Romano, Giovanni Mascali, V. Romano, 2005 .

MEP parabolic hydrodynamical model for holes in silicon semiconductors

Vittorio Romano, Giovanni Mascali, J. M. Sellier, 2005 .

Numerical simulation of a double-gate MOSFET with a subband model for semiconductors based on the maximum entropy principle

Vittorio Romano, Giovanni Mascali, Vito Dario Camiola, 2012 .

Si and GaAs mobility derived from a hydrodynamical model for semiconductors based on the maximum entropy principle

Vittorio Romano, Giovanni Mascali, V. Romano, 2005 .

Mathematical Problems in Semiconductor Physics

Walter Allegretto, Vittorio Romano, Giovanni Mascali, 2003 .