J. Barak

发表

Study of natural space radiation effects in semiconductor devices for selection of electronic parts

D. David, J. Levinson, J. Barak, 1995, Eighteenth Convention of Electrical and Electronics Engineers in Israel.

Ion-track structure and its effects in small size volumes of silicon

J. Barak, A. Akkerman, J. Barak, 2002 .

On the angular dependence of proton induced events and charge collection [SRAMs]

Wojtek Hajdas, M. Alurralde, J. Barak, 1994 .

Modeling of proton induced SEUs

J. Barak, A. Akkerman, Y. Lifshitz, 1996 .

Anthology of the Development of Radiation Transport Tools as Applied to Single Event Effects

F. Wrobel, M. Gaillardin, G. Hubert, 2013, IEEE Transactions on Nuclear Science.

Ion and electron track-structure and its effects in silicon: model and calculations

Dimitris Emfietzoglou, J. Barak, A. Akkerman, 2005 .

Estimation of upset sensitive volume thickness and critical energy using low energy heavy-ion beams

S. Duzellier, C. Inguimbert, R. Ecoffet, 1997, RADECS 97. Fourth European Conference on Radiation and its Effects on Components and Systems (Cat. No.97TH8294).

Single event upsets in the dual-port-board SRAMs of the MPTB experiment

M.A. Carts, J. Barak, R.A. Reed, 1999, 1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471).

A new approach to the analysis of SEU and SEL data to obtain the sensitive volume thickness [ICs]

M. Hass, J. Barak, A. Akkerman, 1995 .

The effect of the angle of incidence on proton induced single events in devices-a critical assessment by modeling

J. Barak, A. Akkerman, Y. Lifshitz, 1997 .

Direct processes in the energy deposition of protons in silicon

Wojtek Hajdas, J. Barak, J. Barak, 1996 .

Microbeam mapping of single event latchups and single event upsets in CMOS SRAMs

J. Barak, J. Barak, E. Adler, 1997 .

Using a carbon beam as a probe to extract the thickness of sensitive volumes

Robert Ecoffet, S. Duzellier, C. Inguimbert, 1999, 1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471).

Using a carbon beam as a probe to extract the thickness of sensitive volumes

Robert Ecoffet, Sophie Duzellier, C. Inguimbert, 1999 .

Simple Calculations of Proton SEU Cross Sections from Heavy Ion Cross Sections

J. Barak, J. Barak, 2006, IEEE Transactions on Nuclear Science.

On the figure of merit model for SEU rate calculations

K. A. LaBel, Robert A. Reed, J. Barak, 1999 .

Detecting heavy ions and protons in space: single-events monitor

J. Barak, Y. Lifshitz, J. Levinson, 1995, Eighteenth Convention of Electrical and Electronics Engineers in Israel.

A simple model for calculating proton induced SEU

J. Barak, A. Akkerman, Y. Lifshitz, 1995 .

Temperature effects and long term fading of implanted and unimplanted gate oxide RADFETs

A. Jaksic, J. Barak, N. Refaeli, 2004, IEEE Transactions on Nuclear Science.