Hidetoshi Fujimoto

The operational amplifier circuit

藤本 英俊, Kenichi Arimura, Hidetoshi Fujimoto, 1994 .

Effects of thermal treatment of low-temperature GaN buffer layers on the quality of subsequent GaN layers

Kazuhiko Itaya, Yoshihiro Kokubun, Hidetoshi Fujimoto, 1997 .

Influence of electric field upon current collapse phenomena and reliability in high voltage GaN-HEMTs

Wataru Saito, Tomohiro Nitta, Yasunobu Saito, 2010, 2010 22nd International Symposium on Power Semiconductor Devices & IC's (ISPSD).

Room Temperature Pulsed Operation of Nitride Based Multi-Quantum-Well Laser Diodes with Cleaved Facets on Conventional C-Face Sapphire Substrates

Masayuki Ishikawa, Masahiro Yamamoto, Kazuhiko Itaya, 1996 .

Field-Plate Structure Dependence of Current Collapse Phenomena in High-Voltage GaN-HEMTs

Wataru Saito, Tomohiro Nitta, Masakazu Yamaguchi, 2010, IEEE Electron Device Letters.

Photoreflectance and Photoluminescence Study of (GaAs)m/(AlAs)5 (m=3-11) Superlattices: Direct and Indirect Transition

Kenji Taniguchi, Chihiro Hamaguchi, Kenji Imanishi, 1989 .

Crossover of Direct and Indirect Transitions in (GaAs)m/(AlAs)5 Superlattices (m=1-11)

Kenji Taniguchi, Chihiro Hamaguchi, Kenji Imanishi, 1989 .

Direct and indirect transition in (GaAs)n/(AlAs)n superlattices with n=1-15.

Kenji Taniguchi, Chihiro Hamaguchi, Hiromu Kato, 1990 .