Henri Happy

发表

Electrical compact modelling of graphene transistors

Cédric Majek, Thomas Zimmer, Cristell Maneux, 2011 .

Characterization and modeling of low-frequency noise in CVD-grown graphene FETs

Thomas Zimmer, Sébastien Fregonese, Cristell Maneux, 2015, 2015 45th European Solid State Device Research Conference (ESSDERC).

Design ofBranch-Line Coupler intheG-Frequency Band

Eric Rius, Henri Happy, Sylvie Lepilliet, 2006 .

Hemt’s capability for millimeter wave applications

Henri Happy, Alain Cappy, M. Zaknoune, 2001, Ann. des Télécommunications.

Helena: A Physical Modeling for the DC, AC, Noise and Non Linear HEMT Performance

Francois Danneville, Henri Happy, Gilles Dambrine, 1993 .

Physics-based electrical compact model for monolayer Graphene FETs

Thomas Zimmer, Sébastien Fregonese, Cristell Maneux, 2016, 2016 46th European Solid-State Device Research Conference (ESSDERC).

Small-Signal Model for 2D-Material Based FETs Targeting Radio-Frequency Applications: The Importance of Considering Nonreciprocal Capacitances

Wei Wei, Henri Happy, Francisco Pasadas, 2017, IEEE Transactions on Electron Devices.

Qualitative assessment of epitaxial graphene FETs on SiC substrates via pulsed measurements and temperature variation

Thomas Zimmer, Sébastien Fregonese, Cristell Maneux, 2014, 2014 44th European Solid State Device Research Conference (ESSDERC).

Helena: A friendly software for calculating the DC, AC, and noise performance of HEMTs

Francois Danneville, Henri Happy, Gilles Dambrine, 1993 .

HELENA: a new software for the design of MMICs

Henri Happy, Gilles Dambrine, Alain Cappy, 1991, 1991 IEEE MTT-S International Microwave Symposium Digest.

Design ofWide-Band Branch-Line Coupler intheG-Frequency Band

Eric Rius, Henri Happy, Sylvie Lepilliet, 2006 .

Measurement Techniques for RF Nanoelectronic Devices: New Equipment to Overcome the Problems of Impedance and Scale Mismatch

Henri Happy, Kamel Haddadi, Tuami Lasri, 2014, IEEE Microwave Magazine.

Influence of the gate leakage current on the noise performance of MESFETs and MODFETs

Francois Danneville, Henri Happy, Gilles Dambrine, 1995 .

Contact resistance Study of “edge-contacted” metal-graphene interfaces

Max C. Lemme, Henri Happy, Amit Gahoi, 2016, 2016 46th European Solid-State Device Research Conference (ESSDERC).

Modelling of pseudomorphic AlGaAs/GaInAs/AlGaAs layers using selfconsistent approach

Henri Happy, Alain Cappy, Yvon Cordier, 1990, Eur. Trans. Telecommun..

Single-Pole-Double-Throw RF switches based on monolayer MoS2

Myungsoo Kim, Deji Akinwande, Henri Happy, 2021, 2021 Device Research Conference (DRC).

Microwave flexible gas sensor based on polymer multi wall carbon nanotubes sensitive layer

Dominique Baillargeat, Dominique Rebière, Henri Happy, 2017 .

High frequency noise characterisation of graphene FET device

Sebastien Fregonese, Henri Happy, Gilles Dambrine, 2013, 2013 IEEE MTT-S International Microwave Symposium Digest (MTT).

A Large-Signal Monolayer Graphene Field-Effect Transistor Compact Model for RF-Circuit Applications

Thomas Zimmer, Cristell Maneux, Henri Happy, 2017, IEEE Transactions on Electron Devices.

Inkjet printed flexible transmission lines for high frequency applications up to 67 GHz

Henri Happy, Emiliano Pallecchi, Colin Mismer, 2014, 2014 9th European Microwave Integrated Circuit Conference.

Non-volatile RF and mm-wave Switches Based on Monolayer hBN

Etienne Okada, Myungsoo Kim, Deji Akinwande, 2019, 2019 IEEE International Electron Devices Meeting (IEDM).

Gigahertz frequency flexible carbon nanotube transistors

Henri Happy, Gilles Dambrine, Nicolas Chimot, 2007 .

A new method for on wafer noise measurement

Francois Danneville, Henri Happy, Gilles Dambrine, 1993 .

Gigahertz characterization of a single carbon nanotube

Henri Happy, Gilles Dambrine, Nicolas Chimot, 2010 .

VOCs monitoring using differential microwave capacitive resonant transducer and conductive PEDOT:PSS-MWCNTs nanocomposite film for environmental applications

Dominique Baillargeat, Dominique Rebière, Henri Happy, 2018 .

80 GHz field-effect transistors produced using high purity semiconducting single-walled carbon nanotubes

Henri Happy, Gilles Dambrine, Mark C. Hersam, 2009 .

Influence of temperature on high frequency performance of graphene nano ribbon field effect transistor

Henri Happy, Gilles Dambrine, G. Dambrine, 2010, 68th Device Research Conference.

Intrinsic current gain cutoff frequency of 30GHz with carbon nanotube transistors

Henri Happy, Gilles Dambrine, Nicolas Izard, 2007 .

94-GHz low noise amplifier on InP in coplanar technology

Henri Happy, Alain Cappy, S. Boret, 1999 .

The indium content in metamorphic As/As HEMTs on GaAs substrate: a new structure parameter

Henri Happy, Alain Cappy, Sylvie Lepilliet, 2000 .

Graphene FETs With Aluminum Bottom-Gate Electrodes and Its Natural Oxide as Dielectrics

Henri Happy, Emiliano Pallecchi, Elisabeth Galopin, 2015, IEEE Transactions on Electron Devices.

Microscopic noise modeling and macroscopic noise models: how good a connection? [FETs]

Francois Danneville, Henri Happy, Gilles Dambrine, 1994 .