J. Zhao

Nickel SALICIDE technology for sub-100nm CMOS devices

D. Mercer, J. P. Lu, Donald S. Miles, 2004 .

On the effects of hydrogen in p-n-p transistors under forward current stress in a C-BiCMOS technology

J. Zhao, G. Li, J. Sun, 1993, IEEE Electron Device Letters.

A novel nickel SALICIDE process technology for CMOS devices with sub-40 nm physical gate length

J. Zhao, T. Grider, D. Mercer, 2002, Digest. International Electron Devices Meeting,.

Resolving the mechanisms of current gain increase under forward current stress in poly emitter n-p-n transistors

J. Zhao, J.Y.-C. Sun, G.P. Li, 1993, IEEE Electron Device Letters.