T. Grider

Nickel SALICIDE technology for sub-100nm CMOS devices

D. Mercer, J. P. Lu, Donald S. Miles, 2004 .

A novel nickel SALICIDE process technology for CMOS devices with sub-40 nm physical gate length

J. Zhao, T. Grider, D. Mercer, 2002, Digest. International Electron Devices Meeting,.

Advanced CMOS transistors with a novel HfSiON gate dielectric

H. Bu, R. Khamankar, T. Grider, 2002, 2002 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.01CH37303).

An enhanced 90nm high performance technology with strong performance improvements from stress and mobility increase through simple process changes

B. Hornung, C. Machala, A. Krishnan, 2004, Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004..