M. R. Fahy

Selectively varying the number of active quantum wells in integrated devices using only one growth step

Robin Williams, Francoise Chatenoud, A. R. Pratt, 1995, Photonics West.

Atomic-scale imaging of strain relaxation via misfit dislocations in highly mismatched semiconductor heteroepitaxy: InAs/GaAs(111)A

Hiroshi Yamaguchi, B. A. Joyce, J. L. Sudijono, 1997 .

Extremely low threshold current density InGaAs/GaAs/AIGaAs strained SQW laser grown by MBE with As2

Z. R. Wasilewski, Francoise Chatenoud, Michael M. Dion, 1996 .

Reflection high‐energy electron diffraction and optical measurements on the molecular‐beam epitaxial growth of one and two monolayers of InAs on GaAs

Ray Murray, B. A. Joyce, S. S. Dosanjh, 1992 .