M. R. Baklanov

Challenges in the implementation of low-k dielectrics in the back-end of line

J. Michelon, Gerald Beyer, Youssef Travaly, 2005 .

JSS FOCUS ISSUE ON ADVANCED INTERCONNECTS :M ATERIALS ,P ROCESSING, AND RELIABILITY Electrical Reliability Challenges of Advanced Low-k Dielectrics

Yunlong Li, K. Croes, M. R. Baklanov, 2015 .

Mechanical Stability of Porous Low-k Dielectrics

K. Vanstreels, M. R. Baklanov, K. Vanstreels, 2015 .

Trap spectroscopy and Ta penetration induced charge trapping in porous SiOCH low-k dielectrics

R. Degraeve, K. Croes, Y. Barbarin, 2013, 2013 IEEE International Reliability Physics Symposium (IRPS).

Determination of pore size distribution in thin films by ellipsometric porosimetry

M. R. Baklanov, V. G. Polovinkin, F. Dultsev, 2000 .

Time dependent dielectric breakdown study of organo silicate glass materials over a wide range of k-values

K. Croes, Y. Barbarin, Z. Tokei, 2012, 2012 IEEE International Interconnect Technology Conference.

High-resolution electron spin resonance analysis of ion bombardment induced defects in advanced low-κ insulators (κ = 2.0-2.5)

Andre Stesmans, Michel Houssa, Valery V. Afanas'ev, 2013 .

Electron spin resonance study of defects in low-κ oxide insulators (κ=2.5-2.0)

Andre Stesmans, Gerald Beyer, Valery V. Afanas'ev, 2011 .

Comparative study of PECVD SiOCH low-k films obtained at different deposition conditions

Karen Maex, Denis Shamiryan, Serge Vanhaelemeersch, 2002 .