B. Giffard

发表

Transfert de circuits SOI sur substrat transparent par adhésion moléculaire

Bernard Aspar, Marc Zussy, Beatrice Biasse, 1999 .

Accurate and efficient method for accelerated history effect simulations

O. Faynot, Philippe Flatresse, Marc Belleville, 2003 .

Fully-depleted SOI process optimization for 60 nm CMOS transistors

T. Skotnicki, R. Palla, B. Giffard, 2003, 2003 IEEE International Conference on SOI.

Expectable Performances of Short Channel NMOS Technologies

G. Guegan, B. Giffard, J. Gautier, 1983, ESSCIRC '83: Ninth European Solid-State Circuits Conference.

Accurate determination of the main parameters from V/sub t/(V/sub b/) curves of fully-depleted SOI devices

O. Faynot, A. Toffoli, B. Giffard, 1995, Proceedings International Conference on Microelectronic Test Structures.

New routes and diversifications ofr nanoelectronics by the end of the roadmap and beyond

O. Faynot, M. Vinet, T. Ernst, 2008, 2008 IEEE International Conference on Electron Devices and Solid-State Circuits.

Dispositif limiteur de courant pour protection série : L'intégration des semiconducteurs de puissance

B. Giffard, Jean-Louis Sanchez, C. Anceau, 1997 .

Dynamic effects in SOI MOSFET's

B. Giffard, A.J. Auberton-Herve, F. Goutti, 1991, 1991 IEEE International SOI Conference Proceedings.

Investigation of a Sequential Three-Dimensional Process for Back-Illuminated CMOS Image Sensors With Miniaturized Pixels

P. Batude, M. Vinet, B. Giffard, 2009, IEEE Transactions on Electron Devices.

Terahertz detection by field effect transistors security imaging

F. Teppe, W. Knap, B. Giffard, 2011, Defense + Commercial Sensing.

Advanced SOI MOSFETs : structures and device physics

O. Faynot, S. Deleonibus, Anne Vandooren, 2005 .

High performance submicron SOI devices with silicon film thickness below 50 nm

O. Faynot, B. Giffard, C. Raynaud, 1994, Proceedings. IEEE International SOI Conference.

Invited) Future Challenges and Diversifications for Nanoelectronics by the End of the Roadmap and Beyond

O. Faynot, M. Vinet, B. Giffard, 2010 .

High total dose effects on CMOS/SOI technology

Eric Delagnes, B. Giffard, O. Flament, 1991 .

CMOS/SOI hardening at 100 Mrad (SiO/sub 2/)

B. Giffard, Michel Bruel, J. Margail, 1990 .

Performances of a 16 K SRAM processed in a 150 nm SIMOX film for high speed applications

B. Giffard, A.J. Auberton-Herve, M. Bruel, 1989, IEEE SOS/SOI Technology Conference.

SEU in SOI SRAMs-a static model

B. Giffard, V. Ferlet-Cavrois, Jean-Luc Leray, 1994 .

Imaging above 1 THz limit with Si-MOSFET detectors

L. Dussopt, A. Siligaris, F. Teppe, 2010, 35th International Conference on Infrared, Millimeter, and Terahertz Waves.

Parasitic transients induced by floating substrate effect and bipolar transistor on SOI technologies

B. Giffard, J. Gautier, A.J. Auberton-Herve, 1991, ESSDERC '91: 21st European Solid State Device Research Conference.

High performance ultrathin SOI MOSFET's obtained by localized oxidation

O. Faynot, B. Giffard, 1994, IEEE Electron Device Letters.

Deep trench isolation for 600 V SOI power devices

B. Giffard, L. Clavelier, B. Charlet, 2003, ESSDERC '03. 33rd Conference on European Solid-State Device Research, 2003..

A highly reliable Amorphous Silicon photosensor for above IC CMOS image sensor

P. Gidon, F. Roy, B. Giffard, 2006, 2006 International Electron Devices Meeting.

Hot carrier-induced degradation mechanisms in short-channel SIMOX p-MOSFET's

G. Reimbold, B. Giffard, T. Ouisse, 1992, ESSDERC '92: 22nd European Solid State Device Research conference.

Field dependent charge trapping effects in SIMOX and buried oxides at very high dose

B. Giffard, J. Margail, O. Flament, 1992 .

Setting up 3D sequential integration for back-illuminated CMOS image sensors with highly miniaturized pixels with low temperature fully depleted SOI transistors

P. Batude, M. Vinet, Y. Cazaux, 2008, 2008 IEEE International Electron Devices Meeting.

/spl Omega/FETs transistors with TiN metal gate and HfO/sub 2/ down to 10nm

X. Garros, O. Faynot, M. Vinet, 2005, Digest of Technical Papers. 2005 Symposium on VLSI Technology, 2005..

CMOS/SOI HARDENING AT 100 MRAD(Si0,)

B. Giffard, Michel Bruel, J. Margail, 2013 .

From substrate to VLSI: investigation of hardened SIMOX without epitaxy, for dose, dose rate and SEU phenomena

A. Umbert, B. Giffard, Michel Bruel, 1988 .

Dynamic aging of CMOS SOI transistors in circuit operation

G. Reimbold, Sorin Cristoloveanu, D. Blachier, 1995, Proceedings of International Electron Devices Meeting.