Nils Guenter Weimann

发表

Compact InP-based HBT VCOs with a wide tuning range at W- and D-band

R. F. Kopf, Young-Kai Chen, J. P. Mattia, 2000 .

InP double-hetero bipolar transistor technology for 130 GHz clock speed

Y. Baeyens, Vincent Houtsma, Y. Yang, 2006 .

Impact of Si doping on radio frequency dispersion in unpassivated GaN/AlGaN/GaN high-electron-mobility transistors grown by plasma-assisted molecular-beam epitaxy

Oleg Mitrofanov, Michael J. Manfra, Nils Guenter Weimann, 2003 .

AlGaN/GaN heterostructures on insulating AlGaN nucleation layers

Lester F. Eastman, Oliver Ambacher, James R. Shealy, 1999 .

Undoped AlGaN/GaN HEMTs for microwave power amplification

Lester F. Eastman, Oliver Ambacher, William J. Schaff, 2001 .

High-reflectivity ultraviolet AlGaN∕AlGaN distributed Bragg reflectors

Theo Siegrist, Richard J. Molnar, Oleg Mitrofanov, 2006 .

Scattering of electrons at threading dislocations in GaN

Lester F. Eastman, Theodore D. Moustakas, Nils Guenter Weimann, 1998 .

Smooth and vertical-sidewall InP etching using Cl2/N2 inductively coupled plasma

Fow-Sen Choa, Jie Lin, Andreas Leven, 2004 .

GaN nanotip pyramids formed by anisotropic etching

Nils Guenter Weimann, N. Weimann, Hock M. Ng, 2003 .

Patterning GaN Microstructures by Polarity-Selective Chemical Etching

Nils Guenter Weimann, N. Weimann, W. Parz, 2003 .

InP DHBT circuits: From device physics to 40 Gb/s and 100 Gb/s transmission system experiments

Gabriel Charlet, Gregory Raybon, Vincent Houtsma, 2009 .

Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures

Lester F. Eastman, Oliver Ambacher, Martin Stutzmann, 1999 .

Second-harmonic generation in periodically poled GaN

Manish Bhardwaj, Nils Guenter Weimann, Manish Bhardwaj, 2003 .

The role of dislocation scattering in n-type GaN films

Lester F. Eastman, Theodore D. Moustakas, Nils Guenter Weimann, 1998 .

Optical Arbitrary Waveform Generation

Andreas Leven, Peter J. Delfyett, Y. Yang, 2007 .

High Power, Broadband, Linear, Solid State Amplifier.

Lester F. Eastman, Oliver Ambacher, V. Tilak, 1999 .

High mobility AlGaN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy on semi-insulating GaN templates prepared by hydride vapor phase epitaxy

H. L. Stormer, Richard J. Molnar, Julia W. P. Hsu, 2002 .