S. Nakashima
发表
Electrical characteristics of the interface between the top Si and buried oxide in ITOX-SIMOX wafers
J. Kodate,
Mitsutoshi Takahashi,
S. Nakashima,
1998,
1998 IEEE International SOI Conference Proceedings (Cat No.98CH36199).
K. Kato,
S. Nakashima,
M. Akiya,
1984,
IEEE Journal of Solid-State Circuits.
S. Nakashima,
K. Izumi,
1990
.
S. Nakashima,
K. Izumi,
S. Nakashima,
1985
.
S. Nakashima,
M. Akiya,
M. Akiya,
1986,
IEEE Transactions on Electron Devices.
T. Sakai,
S. Date,
H. Inokawa,
1995,
Proceedings of International Electron Devices Meeting.