Konrad Kostecki

Device performance tuning of Ge gate-all-around tunneling field effect transistors by means of GeSn: Potential and challenges

Kurt Busch, Jörg Schulze, Inga A. Fischer, 2017, 2017 40th International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO).

Comparison of EL emitted by LEDs on Si substrates containing Ge and Ge/GeSn MQW as active layers

Jörg Schulze, Erich Kasper, Martin Kittler, 2015, Photonics West - Optoelectronic Materials and Devices.

Ge-on-Si photodiode with black silicon boosted responsivity

Thomas Käsebier, Andreas Tünnermann, Jörg Schulze, 2015 .

Epitaxial growth of highly compressively strained GeSn alloys up to 12.5% Sn

Jörg Schulze, Stephan Wirths, Dan Buca, 2013 .

Franz-Keldysh effect in GeSn pin photodetectors

Jörg Schulze, Michael Oehme, Martin Gollhofer, 2014 .

Electrically pumped lasing from Ge Fabry-Perot resonators on Si.

Erich Kasper, Marc Schmid, Michael Oehme, 2015, Optics express.

GeSn-on-Si normal incidence photodetectors with bandwidths more than 40 GHz.

Jörg Schulze, Erich Kasper, Marc Schmid, 2014, Optics express.

Franz-Keldysh Effect in GeSn Detectors

Erich Kasper, Marc Schmid, Michael Oehme, 2014 .

GeSn Heterojunction LEDs on Si Substrates

Gregor Mussler, Dan Buca, Martin Kittler, 2014, IEEE Photonics Technology Letters.

Electroluminescence of GeSn/Ge MQW LEDs on Si substrate.

Jörg Schulze, Martin Kittler, Bernhard Schwartz, 2015, Optics letters.

Epitaxial growth of strained and unstrained GeSn alloys up to 25% Sn

Jörg Schulze, Erich Kasper, Michael Oehme, 2014 .