A. Alam

Material and device issues of AlGaN/GaN HEMTs on silicon substrates

Peter Kordos, P. Javorka, A. Alam, 2003, Microelectron. J..

Spectral-angular and threshold characteristics of ultraviolet-blue In(Al)GaN/GaN/Al2O3 heterostructure lasers

Michael Heuken, A. Alam, H. Protzmann, 2002, International Conference on Coherent and Nonlinear Optics.

Investigation of buffer growth temperatures for MOVPE of GaN on Si(1 1 1)

Michael Heuken, Holger Kalisch, A. Alam, 2003 .

Material and device issues of AlGaN/GaN HEMTs on silicon substrates

Michael Heuken, Peter Kordos, A. Alam, 2003, Microelectron. J..

Luminescence and stimulated emission from gan on silicon substrates heterostructures

Michael Heuken, Holger Kalisch, A. Alam, 2002 .

Metalorganic Chemical Vapor Phase Epitaxy of Crack-Free GaN on Si (111) Exceeding 1 µm in Thickness

Michael Heuken, A. Alam, Armin Dadgar, 2000 .

Carrier diffusion length measured by optical method in GaN epilayers grown by MOCVD on sapphire substrates

Michael Heuken, Holger Kalisch, A. Alam, 2005 .

Luminescence and lasing in InGaN∕GaN multiple quantum well heterostructures grown at different temperatures

Michael Heuken, Holger Kalisch, A. Alam, 2004 .

AlGaN/GaN HEMTs on (111) silicon substrates

A. Alam, M. Heuken, A. Fox, 2002, IEEE Electron Device Letters.