T. R. Assis

Single-Event Performance of Sense-Amplifier Based Flip-Flop Design in a 16-nm Bulk FinFET CMOS Process

L. W. Massengill, B. Narasimham, W. T. Holman, 2017, IEEE Transactions on Nuclear Science.

Estimation of single-event transient pulse characteristics for predictive analysis

J. S. Kauppila, L. W. Massengill, B. L. Bhuva, 2016, 2016 IEEE International Reliability Physics Symposium (IRPS).

SE performance of a Schmitt-trigger-based D-flip-flop design in a 16-nm bulk FinFET CMOS process

D. R. Ball, L. W. Massengill, B. L. Bhuva, 2016, 2016 IEEE International Reliability Physics Symposium (IRPS).

tion for Nanoscale Technologies : A Co

Bharat L. Bhuva, N. N. Mahatme, A. S. Oates, 2015 .

14/16nm FinFET Radiation Response Characterization

J. S. Kauppila, Lloyd W. Massengill, T. D. Loveless, 2016 .

Temperature dependence of soft-error rates for FF designs in 20-nm bulk planar and 16-nm bulk FinFET technologies

J. S. Kauppila, D. R. Ball, L. W. Massengill, 2016, 2016 IEEE International Reliability Physics Symposium (IRPS).

Single-Event Upset Characterization Across Temperature and Supply Voltage for a 20-nm Bulk Planar CMOS Technology

J. S. Kauppila, T. D. Haeffner, L. W. Massengill, 2015, IEEE Transactions on Nuclear Science.

Thermal neutron-induced soft-error rates for flip-flop designs in 16-nm bulk FinFET technology

B. L. Bhuva, B. Narasimham, S.-J. Wen, 2017, 2017 IEEE International Reliability Physics Symposium (IRPS).

Estimation of Single-Event-Induced Collected Charge for Multiple Transistors Using Analytical Expressions

J. S. Kauppila, L. W. Massengill, B. L. Bhuva, 2015, IEEE Transactions on Nuclear Science.