Przemyslaw Kotara

New degradation mechanism observed for AlGaN/GaN HEMTs with sub 100 nm scale unpassivated regions around the gate periphery

Christian Boit, Günther Tränkle, Anna Mogilatenko, 2014, Microelectron. Reliab..

(Invited) High Voltage Normally-Off Transistors and Efficient Schottky Diodes based on GaN Technology

Frank Brunner, Arne Knauer, Markus Weyers, 2011 .

Device Breakdown and Dynamic effects in GaN Power Switching Devices: Dependencies on Material Properties and Device Design

Frank Brunner, Joachim Würfl, Arne Knauer, 2013 .

Improved Vertical Isolation for Normally-Off High Voltage GaN-HFETs on n-SiC Substrates

Frank Brunner, Joachim Wurfl, Arne Knauer, 2013, IEEE Transactions on Electron Devices.