N. Yu. Gordeev

发表

Green, yellow and bright red (In,Ga,Al)P–GaP diode lasers grown on high-index GaAs substrates

Mikhail V. Maximov, N. N. Ledentsov, V. A. Shchukin, 2017, LASE.

Single transverse mode 850 nm GaAs/AlGaAs lasers with narrow beam divergence

Nikolai N. Ledentsov, Mikhail V. Maximov, A. R. Kovsh, 2006 .

Temperature characteristics of low-threshold high-efficiency quantum-dot lasers with the emission wavelength from 1.25 to 1.29 µm

A. R. Kovsh, D. Bimberg, N. N. Ledentsov, 2003 .

Effect of p-doping of the active region on the temperature stability of InAs/GaAs QD lasers

Nikolai N. Ledentsov, Igor L. Krestnikov, A. R. Kovsh, 2005 .

Quantum dot injection heterolaser with ultrahigh thermal stability of the threshold current up to 50 °C

D. Bimberg, N. N. Ledentsov, Yu. M. Shernyakov, 1997 .

Edge-emitting InGaAs/GaAs laser with high temperature stability of wavelength and threshold current

Nikolai N. Ledentsov, Mikhail V. Maximov, Vitaly A. Shchukin, 2010 .

The impact of thermal effects on the performance of vertical-cavity surface-emitting lasers based on sub-monolayer InGaAs quantum dots

Nikolai N. Ledentsov, Mikhail V. Maximov, A. R. Kovsh, 2007 .

A 1.33 µm InAs/GaAs quantum dot laser with a 46 cm−1 modal gain

Mikhail V. Maximov, Igor L. Krestnikov, A. R. Kovsh, 2008 .

High-power single mode (>1W) continuous wave operation of longitudinal photonic band crystal lasers with a narrow vertical beam divergence

Mikhail V. Maximov, N. N. Ledentsov, V. A. Shchukin, 2008 .

Metamorphic 1.5 µm-range quantum dot lasers on a GaAs substrate

Nikolai N. Ledentsov, Mikhail V. Maximov, Gerrit Fiol, 2006 .

MBE-grown ultra-large aperture single-mode vertical-cavity surface-emitting laser with all-epitaxial filter section

Nikolai N. Ledentsov, Mikhail V. Maximov, Friedhelm Hopfer, 2007 .

LOW THRESHOLD QUANTUM DOT INJECTION LASER EMITTING AT 1.9MU M

D. Bimberg, Sergei V. Zaitsev, N. N. Ledentsov, 1998 .

High power GaInP/AlGaInP visible lasers (λ = 646 nm) with narrow circular shaped far-field pattern

Mikhail V. Maximov, N. N. Ledentsov, Vladimir Kalosha, 2005 .

Degradation-robust single mode continuous wave operation of 1.46μm metamorphic quantum dot lasers on GaAs substrate

Mikhail V. Maximov, Gerrit Fiol, Matthias Kuntz, 2006 .

High-power edge-emitting laser diode with narrow vertical beam divergence

Nikolai N. Ledentsov, Mikhail V. Maximov, M. Weyers, 2011 .

High-power singlemode CW operation of 1.5 /spl mu/m-range quantum dot GaAs-based laser

Nikolai N. Ledentsov, Mikhail V. Maximov, D. Bimberg, 2005 .

Green (In,Ga,Al)P-GaP light-emitting diodes grown on high-index GaAs surfaces

Mikhail V. Maximov, N. N. Ledentsov, V. A. Shchukin, 2014 .

High power GaAs∕AlGaAs lasers (λ∼850nm) with ultranarrow vertical beam divergence

Mikhail V. Maximov, D. Bimberg, N. N. Ledentsov, 2006 .

Wavelength-stabilized tilted wave lasers with a narrow vertical beam divergence

Nikolai N. Ledentsov, Mikhail V. Maximov, Vitaly A. Shchukin, 2008 .

Temperature dependence of the effective coefficient of Auger recombination in 1.3 μm InAs/GaAs QD lasers

I. I. Novikov, A. P. Vasil’ev, Yu. M. Shernyakov, 2005 .

Single mode cw operation of 658nm AlGaInP lasers based on longitudinal photonic band gap crystal

Mikhail V. Maximov, D. Bimberg, N. N. Ledentsov, 2006 .

Injection lasers based on InGaAs quantum dots in an AlGaAs matrix

D. Bimberg, N. N. Ledentsov, M. V. Maximov, 1998 .