Avishay Katz

发表

Rapid thermal processing in the manufacturing technology of contacts to InP-based photonic devices

Avishay Katz, 1991, Other Conferences.

Dry etching of thin-film InN, AlN and GaN

Stephen J. Pearton, C. R. Abernathy, J. R. Lothian, 1993 .

Study of Ni as a barrier metal in AuSn soldering application for laser chip/submount assembly

Yiu-Man Wong, K. Tai, Avishay Katz, 1992 .

Ion Implantation Doping of InGaP, InGaAs, and InAlAs

J. M. Kuo, Stephen J. Pearton, W. S. Hobson, 1991 .

Plasma etching of III-V semiconductor thin films

Stephen J. Pearton, W. S. Hobson, C. R. Abernathy, 1992 .

ECR plasma etching of chemically vapour deposited diamond thin films

Stephen J. Pearton, J. R. Lothian, Avishay Katz, 1992 .

Indium phosphide and related materials : processing, technology, and devices

Avishay Katz, A. Katz, 1992 .

Au/Pt/Ti contacts to p‐In0.53Ga0.47As and n‐InP layers formed by a single metallization common step and rapid thermal processing

Avishay Katz, B. Weir, W. C. Dautremont-Smith, 1990 .

Dry and wet etching characteristics of InN, AlN, and GaN deposited by electron cyclotron resonance metalorganic molecular beam epitaxy

S. J. Pearton, C. R. Abernathy, J. R. Lothian, 1993 .

Ti/Pt/AuSn metallization scheme for bonding of InP-based laser diodes to chemical vapor deposited diamond submounts

H. S. Luftman, H. Curnan, Avishay Katz, 1993 .