Yasuyuki Ohkura

Statistical Threshold Voltage Fluctuation Analysis by Monte Carlo Ion Implantation Method( the IEEE International Coference on SISPAD '02)

Sanae Ito, Kenji Nishi, Yoshinori Oda, 2003 .

Analysis of injection current with electron temperature for high-K gate stacks

Kenji Nishi, Hiroyuki Takashino, Yasuyuki Ohkura, 2002, International Conferencre on Simulation of Semiconductor Processes and Devices.

Hot Carrier Induced Degradation Due to Multi-Phonon Mechanism Analyzed by Lattice and Device Monte Carlo Coupled Simulation( the IEEE International Coference on SISPAD '02)

Prasad Joshi, Naoki Nakamura, Yasuyuki Ohkura, 2003 .

Monte Carlo study of Si–n-MOSFETs including the quantization of carriers

Yasuyuki Ohkura, Sigeo Ihara, Shinichiro Kimura, 1998 .

An Agent-based Common Software Platform Applied to Multi-scale Device and Process Simulations

Masato Ikegawa, Shoichi Kubo, Yasuyuki Ohkura, 2001 .

Quantum effects in Si n-MOS inversion layer at high substrate concentration

Yasuyuki Ohkura, Y. Ohkura, 1990 .