Y.A. El-Mansy

A new approach to the theory and modeling of insulated-gate field-effect transistors

Y.A. El-Mansy, A.R. Boothroyd, Y. El-Mansy, 1977, IEEE Transactions on Electron Devices.

A simple two-dimensional model for IGFET operation in the saturation region

Y.A. El-Mansy, A.R. Boothroyd, Y. El-Mansy, 1977, IEEE Transactions on Electron Devices.

A novel single-device-well MOSFET gate

Y.A. El-Mansy, M.I. Elmasry, E.Z. Hamdy, 1979, 1979 International Electron Devices Meeting.

Single-device-well MOSFET's

Y.A. El-Mansy, M.I. Elmasry, E.Z. Hamdy, 1981, IEEE Transactions on Electron Devices.

Modelling weak avalanche multiplication currents in IGFETS and SOS transistors for CAD

Y.A. El-Mansy, D. Caughey, Y. El-Mansy, 1975, 1975 International Electron Devices Meeting.

Characterization of silicon-on-sapphire IGFET transistors

Y.A. El-Mansy, D. Caughey, Y. El-Mansy, 1977, IEEE Transactions on Electron Devices.