Keisuke Shinohara

发表

Examination and Evaluation of the Installation Method of Chloride Ion Monitoring Sensors Intended for use within Bored Holes of Existing Concrete Structures

Keisuke Shinohara, 2015 .

Millimeter Wave Wireless Power Transmission-Technologies and Applications

Keisuke Shinohara, Hooman Kazemi, Curtis W Eckhardt, 2019, 2019 IEEE Wireless Power Transfer Conference (WPTC).

First demonstration of W-band millimeter-wave flexible electronics

Keisuke Shinohara, Hooman Kazemi, Hasan Sharifi, 2013, 2013 IEEE MTT-S International Microwave Symposium Digest (MTT).

Millimeter wave antennas with gaussian radiation patterns

Ronan Sauleau, Toshiaki Matsui, Keisuke Shinohara, 2001 .

Modified design of photonic crystals with negative refractive behavior to expand the field-of-view of optical receivers

Werner Klaus, Yoshihisa Takayama, Keisuke Shinohara, 2004, SPIE OPTO.

Recent advances in monolithic integration of diverse technologies with Si CMOS

Keisuke Shinohara, Wonill Ha, Peter D. Brewer, 2014, 2014 IEEE 14th Topical Meeting on Silicon Monolithic Integrated Circuits in Rf Systems.

Magneto-excitons in (411)A and (100)-oriented GaAs/AlGaAs multiple quantum well structures

Ilya Krivorotov, Keisuke Shinohara, Eric Daniel Jones, 1999, Photonics West.

Effects of heterointerface flatness on device performance of InP-based HEMT -- Reduction of interface roughness scattering using (411)A-oriented substrate

Takahiro Kitada, Issei Watanabe, Toshiaki Matsui, 2006 .

Scaling of GaN HEMTs and Schottky Diodes for Submillimeter-Wave MMIC Applications

Keisuke Shinohara, Thomas C. Oh, Miroslav Micovic, 2013, IEEE Transactions on Electron Devices.

GaN-Based Field-Effect Transistors With Laterally Gated Two-Dimensional Electron Gas

Keisuke Shinohara, Miguel Urteaga, Berinder Brar, 2018, IEEE Electron Device Letters.

Multi‐layer microstrip antennas on quartz substrates: Technological considerations and performances at 60 GHz

Ronan Sauleau, H. Lhermite, Keisuke Shinohara, 2004 .

Ultrahigh-Speed GaN High-Electron-Mobility Transistors With f T / f max of 454/444 GHz

Adele E. Schmitz, Keisuke Shinohara, Andrea Corrion, 2015 .

Enhancement-Mode AlN/GaN/AlGaN DHFET With 700-mS/mm $g_{m}$ and 112-GHz $f_{T}$

Adele E. Schmitz, Keisuke Shinohara, Andrea Corrion, 2010 .

Pseudomorphic In Al As/In Ga As HEMTs With an Ultrahigh of 562 GHz

Toshiaki Matsui, Keisuke Shinohara, Akira Endoh, 2002 .

Ultrahigh-Speed GaN High-Electron-Mobility Transistors With $f_{T}/f_{\mathrm {max}}$ of 454/444 GHz

Keisuke Shinohara, Andrea Corrion, Miroslav Micovic, 2015, IEEE Electron Device Letters.

Extremely High-Speed Lattice-Matched InGaAs/InAlAs High Electron Mobility Transistors with 472 GHz Cutoff Frequency

Toshiaki Matsui, Keisuke Shinohara, Akira Endoh, 2002 .